IndiumV3, Main, Repository, bibRecord, 000916

Melt growth, characterization and properties of bulk In2O3 single crystals

Identifieur interne : 000916 ( Main/Repository ); précédent : 000915; suivant : 000917

Melt growth, characterization and properties of bulk In2O3 single crystals

Auteurs : RBID : Pascal:13-0116322

Descripteurs français

Pascal (Inist)
- Méthode phase fondue, Mécanisme croissance, Haute pression, Pression partielle, Recuit, Croissance cristalline en phase vapeur, Conductivité type n, Densité porteur charge, Mobilité Hall, Conductivité électrique, Transition métal semiconducteur, Spectre visible, Spectre IR, Limite absorption, Oxyde d'indium, Monocristal, Semiconducteur, Structure cristalline, Diagramme rotation, Diffraction RX, Propriété électrique, Facteur transmission, In2O3, 6166F, 8110F, 8110A, 8110B.

English descriptors

KwdEn :
- Absorption edge, Annealing, Carrier density, Crystal growth from vapors, Crystal structure, Electrical conductivity, Electrical properties, Growth from melt, Growth mechanism, Hall mobility, High pressure, Indium oxide, Infrared spectra, Monocrystals, N type conductivity, Partial pressure, Rocking curve, Semiconductor materials, Semiconductor metal transition, Transmittance, Visible spectra, XRD.

Abstract

Truly bulk In₂O₃ single crystals were obtained from the melt for the first time using an innovative growth technique, and, for comparative purpose, from the gas phase (PVT). In₂O₃ undergoes a strong decomposition at elevated temperatures even under high oxygen partial pressure. Bulk single crystals obtained from the melt were dark-brown in color, which changes to greenish upon annealing in a non-reducing atmosphere (i.e. neutral and oxidizing). As-grown In₂O₃ crystals obtained by the PVT method were dark-green. All melt and PVT-grown crystals had n-type conductivity with electron concentration respectively around 2-3 x 10¹⁸/1.5 x 10¹⁹ cm^-3, Hall mobility of 145/110 cm² V^-1 s^-1 and resistivity of 1.5-2.5 x 10^-2/4-5 x 10^-3 Ω cm, where the first value corresponds to melt-grown and the second to PVT crystals. Annealing in the non-reducing atmosphere decreased the electron concentration by one order of magnitude in melt-grown crystals, but produced no effects in PVT-grown In₂O₃. Annealing of melt-grown In₂O₃ crystals lead to a metal-semiconductor like transition. Melt- and PVT-grown crystals exhibited cut-off wavelength at 440 nm. Melt-grown In₂O₃ crystals became fully transparent upon annealing. Their visible and IR spectrum showed a sharp absorption edge. The FWHM of the rocking curve of the melt-grown In₂O₃ single crystals was 28 arcsec.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001145

Links to Exploration step

Pascal:13-0116322

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Melt growth, characterization and properties of bulk In<sub>2</sub>
O<sub>3</sub>
 single crystals</title>
<author><name sortKey="Galazka, Z" uniqKey="Galazka Z">Z. Galazka</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Uecker, R" uniqKey="Uecker R">R. Uecker</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Irmscher, K" uniqKey="Irmscher K">K. Irmscher</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Schulz, D" uniqKey="Schulz D">D. Schulz</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Klimm, D" uniqKey="Klimm D">D. Klimm</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Albrecht, M" uniqKey="Albrecht M">M. Albrecht</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Pietsch, M" uniqKey="Pietsch M">M. Pietsch</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ganschow, S" uniqKey="Ganschow S">S. Ganschow</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Kwasniewski, A" uniqKey="Kwasniewski A">A. Kwasniewski</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Fornari, R" uniqKey="Fornari R">R. Fornari</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0116322</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0116322 INIST</idno>
<idno type="RBID">Pascal:13-0116322</idno>
<idno type="wicri:Area/Main/Corpus">001145</idno>
<idno type="wicri:Area/Main/Repository">000916</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption edge</term>
<term>Annealing</term>
<term>Carrier density</term>
<term>Crystal growth from vapors</term>
<term>Crystal structure</term>
<term>Electrical conductivity</term>
<term>Electrical properties</term>
<term>Growth from melt</term>
<term>Growth mechanism</term>
<term>Hall mobility</term>
<term>High pressure</term>
<term>Indium oxide</term>
<term>Infrared spectra</term>
<term>Monocrystals</term>
<term>N type conductivity</term>
<term>Partial pressure</term>
<term>Rocking curve</term>
<term>Semiconductor materials</term>
<term>Semiconductor metal transition</term>
<term>Transmittance</term>
<term>Visible spectra</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Méthode phase fondue</term>
<term>Mécanisme croissance</term>
<term>Haute pression</term>
<term>Pression partielle</term>
<term>Recuit</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Conductivité type n</term>
<term>Densité porteur charge</term>
<term>Mobilité Hall</term>
<term>Conductivité électrique</term>
<term>Transition métal semiconducteur</term>
<term>Spectre visible</term>
<term>Spectre IR</term>
<term>Limite absorption</term>
<term>Oxyde d'indium</term>
<term>Monocristal</term>
<term>Semiconducteur</term>
<term>Structure cristalline</term>
<term>Diagramme rotation</term>
<term>Diffraction RX</term>
<term>Propriété électrique</term>
<term>Facteur transmission</term>
<term>In2O3</term>
<term>6166F</term>
<term>8110F</term>
<term>8110A</term>
<term>8110B</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Truly bulk In<sub>2</sub>
O<sub>3</sub>
 single crystals were obtained from the melt for the first time using an innovative growth technique, and, for comparative purpose, from the gas phase (PVT). In<sub>2</sub>
O<sub>3</sub>
 undergoes a strong decomposition at elevated temperatures even under high oxygen partial pressure. Bulk single crystals obtained from the melt were dark-brown in color, which changes to greenish upon annealing in a non-reducing atmosphere (i.e. neutral and oxidizing). As-grown In<sub>2</sub>
O<sub>3</sub>
 crystals obtained by the PVT method were dark-green. All melt and PVT-grown crystals had n-type conductivity with electron concentration respectively around 2-3 x 10<sup>18</sup>
/1.5 x 10<sup>19</sup>
 cm<sup>-3</sup>
, Hall mobility of 145/110 cm<sup>2</sup>
 V<sup>-1</sup>
 s<sup>-1</sup>
 and resistivity of 1.5-2.5 x 10<sup>-2</sup>
/4-5 x 10<sup>-3</sup>
 Ω cm, where the first value corresponds to melt-grown and the second to PVT crystals. Annealing in the non-reducing atmosphere decreased the electron concentration by one order of magnitude in melt-grown crystals, but produced no effects in PVT-grown In<sub>2</sub>
O<sub>3</sub>
. Annealing of melt-grown In<sub>2</sub>
O<sub>3</sub>
 crystals lead to a metal-semiconductor like transition. Melt- and PVT-grown crystals exhibited cut-off wavelength at 440 nm. Melt-grown In<sub>2</sub>
O<sub>3</sub>
 crystals became fully transparent upon annealing. Their visible and IR spectrum showed a sharp absorption edge. The FWHM of the rocking curve of the melt-grown In<sub>2</sub>
O<sub>3</sub>
 single crystals was 28 arcsec.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>362</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Melt growth, characterization and properties of bulk In<sub>2</sub>
O<sub>3</sub>
 single crystals</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>The 5th Asia Conference on Crystal Growth and Crystal Technologies</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>GALAZKA (Z.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>UECKER (R.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>IRMSCHER (K.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SCHULZ (D.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KLIMM (D.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>ALBRECHT (M.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>PIETSCH (M.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>GANSCHOW (S.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>KWASNIEWSKI (A.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>FORNARI (R.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>XIANG YANG LIU</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>DAO HUA ZHANG</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>KLOC (Christian)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>CHOW (Ann)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Leibniz Institute for Crystal Growth, Max-Born-Strasse 2</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA20><s1>349-352</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000506230660750</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>26 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0116322</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Truly bulk In<sub>2</sub>
O<sub>3</sub>
 single crystals were obtained from the melt for the first time using an innovative growth technique, and, for comparative purpose, from the gas phase (PVT). In<sub>2</sub>
O<sub>3</sub>
 undergoes a strong decomposition at elevated temperatures even under high oxygen partial pressure. Bulk single crystals obtained from the melt were dark-brown in color, which changes to greenish upon annealing in a non-reducing atmosphere (i.e. neutral and oxidizing). As-grown In<sub>2</sub>
O<sub>3</sub>
 crystals obtained by the PVT method were dark-green. All melt and PVT-grown crystals had n-type conductivity with electron concentration respectively around 2-3 x 10<sup>18</sup>
/1.5 x 10<sup>19</sup>
 cm<sup>-3</sup>
, Hall mobility of 145/110 cm<sup>2</sup>
 V<sup>-1</sup>
 s<sup>-1</sup>
 and resistivity of 1.5-2.5 x 10<sup>-2</sup>
/4-5 x 10<sup>-3</sup>
 Ω cm, where the first value corresponds to melt-grown and the second to PVT crystals. Annealing in the non-reducing atmosphere decreased the electron concentration by one order of magnitude in melt-grown crystals, but produced no effects in PVT-grown In<sub>2</sub>
O<sub>3</sub>
. Annealing of melt-grown In<sub>2</sub>
O<sub>3</sub>
 crystals lead to a metal-semiconductor like transition. Melt- and PVT-grown crystals exhibited cut-off wavelength at 440 nm. Melt-grown In<sub>2</sub>
O<sub>3</sub>
 crystals became fully transparent upon annealing. Their visible and IR spectrum showed a sharp absorption edge. The FWHM of the rocking curve of the melt-grown In<sub>2</sub>
O<sub>3</sub>
 single crystals was 28 arcsec.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A10F</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A10A</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A10B</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60A66F</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Méthode phase fondue</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Growth from melt</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Método fase fundida</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Haute pression</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>High pressure</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Pression partielle</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Partial pressure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Recuit</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Annealing</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Conductivité type n</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>N type conductivity</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Conductividad tipo n</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Mobilité Hall</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Hall mobility</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Transition métal semiconducteur</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Semiconductor metal transition</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Transición metal semiconductor</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Spectre visible</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Visible spectra</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Spectre IR</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Infrared spectra</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Limite absorption</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Absorption edge</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Monocristal</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Monocrystals</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Structure cristalline</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Crystal structure</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Diagramme rotation</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Rocking curve</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Diagrama rotación</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>XRD</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>32</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Facteur transmission</s0>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Transmittance</s0>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Factor transmisión</s0>
<s5>33</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>6166F</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>8110F</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>8110A</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>8110B</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>091</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>CGCT-5 Asia Conference on Crystal Growth and Crystal Technologies</s1>
<s2>5</s2>
<s3>Singapore SGP</s3>
<s4>2011-06-26</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000916 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000916 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0116322
   |texte=   Melt growth, characterization and properties of bulk In2O3 single crystals
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Melt growth, characterization and properties of bulk In2O3 single crystals

Melt growth, characterization and properties of bulk In2O3 single crystals

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri